全文获取类型
收费全文 | 25930篇 |
免费 | 4398篇 |
国内免费 | 3362篇 |
专业分类
化学 | 18779篇 |
晶体学 | 297篇 |
力学 | 1696篇 |
综合类 | 267篇 |
数学 | 2984篇 |
物理学 | 9667篇 |
出版年
2024年 | 10篇 |
2023年 | 511篇 |
2022年 | 545篇 |
2021年 | 776篇 |
2020年 | 1063篇 |
2019年 | 949篇 |
2018年 | 814篇 |
2017年 | 767篇 |
2016年 | 1226篇 |
2015年 | 1174篇 |
2014年 | 1505篇 |
2013年 | 1862篇 |
2012年 | 2406篇 |
2011年 | 2474篇 |
2010年 | 1675篇 |
2009年 | 1546篇 |
2008年 | 1760篇 |
2007年 | 1527篇 |
2006年 | 1486篇 |
2005年 | 1233篇 |
2004年 | 1036篇 |
2003年 | 879篇 |
2002年 | 850篇 |
2001年 | 696篇 |
2000年 | 515篇 |
1999年 | 628篇 |
1998年 | 432篇 |
1997年 | 385篇 |
1996年 | 451篇 |
1995年 | 380篇 |
1994年 | 365篇 |
1993年 | 284篇 |
1992年 | 259篇 |
1991年 | 230篇 |
1990年 | 179篇 |
1989年 | 163篇 |
1988年 | 137篇 |
1987年 | 97篇 |
1986年 | 91篇 |
1985年 | 74篇 |
1984年 | 41篇 |
1983年 | 31篇 |
1982年 | 21篇 |
1981年 | 26篇 |
1980年 | 14篇 |
1963年 | 7篇 |
1959年 | 12篇 |
1958年 | 11篇 |
1957年 | 20篇 |
1956年 | 10篇 |
排序方式: 共有10000条查询结果,搜索用时 18 毫秒
61.
62.
Pingyu Zhu Qilin Zheng Shichuan Xue Chao Wu Xinyao Yu Yang Wang Yingwen Liu Xiaogang Qiang Junjie Wu Ping Xu 《Frontiers of Physics》2020,15(6):61501
One of the most important multipartite entangled states, Greenberger–Horne–Zeilinger state (GHZ), serves as a fundamental resource for quantum foundation test, quantum communication and quantum computation. To increase the number of entangled particles, significant experimental efforts should been invested due to the complexity of optical setup and the difficulty in maintaining the coherence condition for high-fidelity GHZ state. Here, we propose an ultra-integrated scalable on-chip GHZ state generation scheme based on frequency combs. By designing several microrings pumped by different lasers, multiple partially overlapped quantum frequency combs are generated to supply as the basis for on-chip polarization-encoded GHZ state with each qubit occupying a certain spectral mode. Both even and odd numbers of GHZ states can be engineered with constant small number of integrated components and easily scaled up on the same chip by only adjusting one of the pump wavelengths. In addition, we give the on-chip design of projection measurement for characterizing GHZ states and show the reconfigurability of the state. Our proposal is rather simple and feasible within the existing fabrication technologies and we believe it will boost the development of multiphoton technologies. 相似文献
63.
为了提升溶液法制备的蓝色荧光有机发光二极管(OLEDs)的效率,采用了基于热激活延迟发光(TADF)的激基复合物作为主体材料。TADF激基复合物主体可以利用反向系间窜跃上转换形成单线态激子并将能量传递到客体,从而可以同时利用发光层中的三线态激子和单线态激子,以提升蓝色荧光器件的效率。选择蓝色荧光材料1-4-Di-[4-(N,N-diphenyl)amino]styryl-benzene(DSA-ph)作为客体发光材料,4,4′,4″-T-ris(carbazol-9-yl)triphenylamine(TCTA)掺杂1,3,5-Tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl)(TPBi)作为热激活延迟荧光激基复合物主体,通过溶液法制备了蓝色荧光OLEDs。通过测试TCTA,TPBi以及TCTA掺杂TPBi的光致发光光谱发现,与TCTA和TPBi相比,TCTA掺杂TPBi的光致发光谱(PL)发生了明显的红移(峰值波长变为437 nm),而且光谱变宽,证明了TCTA∶TPBi激基复合物的形成。通过对于DSA-ph掺杂激基复合物主体的薄膜与DSA-ph掺杂poly(methyl methacrylate)(PMMA)的薄膜进行PL测试发现,两者发光峰相同,都是来自DSA-ph的发光,说明激基复合物主体将能量传递到了DSA-ph;DSA-ph的吸收光谱与激基复合物主体的PL光谱存在很大重叠,说明激基复合物主体与DSA-ph的能量传递非常有效;通过对激基复合物主体掺杂不同浓度客体的薄膜进行瞬态PL衰减测试发现,与纯DSA-ph的寿命相比,DSA-ph掺杂激基复合物主体之后其寿命会延长,纯DSA-ph的寿命只有1.19 ns,DSA-ph掺杂激基复合物主体的荧光衰减曲线与激基复合物主体的荧光衰减曲线相似,这进一步证明了激基复合物主体将能量传递到了DSA-ph。研究了主体引入以及DSA-ph掺杂浓度对器件性能的影响。对于器件的亮度、电流密度、电压、电流效率、电致发光光谱等参数进行了测试,与不采用激基复合物主体的器件相比,采用激基复合物主体的器件性能明显改善,在DSA-ph掺杂浓度为10%时,器件亮度从2133.6 cd·m^-2提升到了3597.6 cd·m^-2,器件效率从1.44 cd·A-1提升到了3.15 cd·A-1,发光峰只有来自DSA-ph的发光。采用TADF激基复合物主体的方法有潜力实现溶液法制备的高效蓝色荧光OLEDs。 相似文献
64.
Enantioselective Copper‐Catalyzed Azide–Alkyne Click Cycloaddition to Desymmetrization of Maleimide‐Based Bis(alkynes) 下载免费PDF全文
Tao Song Dr. Li Li Dr. Wei Zhou Dr. Zhan‐Jiang Zheng Dr. Yuan Deng Dr. Zheng Xu Prof. Dr. Li‐Wen Xu 《Chemistry (Weinheim an der Bergstrasse, Germany)》2015,21(2):554-558
A copper catalyst system derived from TaoPhos and CuF2 was used successfully for catalytic asymmetric Huisgen [3+2] cycloaddition of azides and alkynes to give optically pure products containing succinimide‐ and triazole‐substituted quaternary carbon stereogenic centers. The desired products were obtained in good yields (60–80 %) and 85:15 to >99:1 enantiomeric ratio (e.r.) in this click cycloaddition reaction. 相似文献
65.
66.
67.
68.
Kang Il Yoo Ji Yeong Jeon Su Jeong Ryu Giri Nam Hyewon Youn Eun Young Choi 《Experimental & molecular medicine》2015,47(2):e140
In allogeneic transplantation, including the B6 anti-BALB.B settings, H60 and H4 are two representative dominant minor histocompatibility antigens that induce strong CD8 T-cell responses. With different distribution patterns, H60 expression is restricted to hematopoietic cells, whereas H4 is ubiquitously expressed. H60-specific CD8 T-cell response has been known to be dominant in most cases of B6 anti-BALB.B allo-responses, except in the case of skin transplantation. To understand the mechanism underlying the subdominance of H60 during allogeneic skin transplantation, we investigated the dynamics of the H60-specific CD8 T cells in B6 mice transplanted with allogeneic BALB.B tail skin. Unexpectedly, longitudinal bioluminescence imaging and flow cytometric analyses revealed that H60-specific CD8 T cells were not always subdominant to H4-specific cells but instead showed a brief dominance before the H4 response became predominant. H60-specific CD8 T cells could expand in the draining lymph node and migrate to the BALB.B allografts, indicating their active participation in the anti-BALB.B allo-response. Enhancing the frequencies of H60-reactive CD8 T cells prior to skin transplantation reversed the immune hierarchy between H60 and H4. Additionally, H60 became predominant when antigen presentation was limited to the direct pathway. However, when antigen presentation was restricted to the indirect pathway, the expansion of H60-specific CD8 T cells was limited, whereas H4-specific CD8 T cells expanded significantly, suggesting that the temporary immunodominance and eventual subdominance of H60 could be due to their reliance on the direct antigen presentation pathway. These results enhance our understanding of the immunodominance phenomenon following allogeneic tissue transplantation. 相似文献
69.
A new asymmetric Salamo‐based ligand H2L was synthesized using 3‐tert‐butyl‐salicylaldehyde and 6‐methoxy‐2‐[O‐(1‐ethyloxyamide)]‐oxime‐1‐phenol. By adjusting the ratio of the ligand H2L and Cu (II), Co (II), and Ni (II) ions, mononuclear, dinuclear, and trinuclear transition metal (II) complexes, [Cu(L)], [{Co(L)}2], and [{Ni(L)(CH3COO)(CH3CH2OH)}2Ni] with the ligand H2L possessing completely different coordination modes were obtained, respectively. The optical spectra of ligand H2L and its Cu (II), Co (II) and Ni (II) complexes were investigated. The Cu (II) complex is a mononuclear structure, and the Cu (II) atom is tetracoordinated to form a planar quadrilateral structure. The Co (II) complex is dinuclear, and the two Co (II) atoms are pentacoordinated and have coordination geometries of distorted triangular bipyramid. The Ni (II) complex is a trinuclear structure, and the terminal and central Ni (II) atoms are all hexacoordinated, forming distorted octahedral geometries. Furthermore, optical properties including UV–Vis, IR, and fluorescence of the Cu (II), Co (II), and Ni (II) complexes were investigated. Finally, the antibacterial activities of the Cu (II), Co (II), and Ni (II) complexes were explored. According to the experimental results, the inhibitory effect was found to be enhanced with increasing concentrations of the Cu (II), Co (II), and Ni (II) complexes. 相似文献
70.
We investigate the thermal stresses for GaAs layers grown on V-groove patterned Si substrates by the finite-element method. The results show that the thermal stress distribution near the interface in a patterned substrate is nonuniform,which is far different from that in a planar substrate. Comparing with the planar substrate, the thermal stress is significantly reduced for the Ga As layer on the patterned substrate. The effects of the width of the V-groove, the thickness, and the width of the SiO2 mask on the thermal stress are studied. It is found that the SiO2 mask and V-groove play a crucial role in the stress of the Ga As layer on Si substrate. The results indicate that when the width of V-groove is 50 nm, the width and the thickness of the SiO2 mask are both 100 nm, the Ga As layer is subjected to the minimum stress. Furthermore,Comparing with the planar substrate, the average stress of the Ga As epitaxial layer in the growth window region of the patterned substrate is reduced by 90%. These findings are useful in the optimal designing of growing high-quality Ga As films on patterned Si substrates. 相似文献